Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface
نویسندگان
چکیده
4H-SiC/SiO2 interface G. Gruber, a) J. Cottom, R. Meszaros, M. Koch, G. Pobegen, T. Aichinger, D. Peters, and P. Hadley Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria University College London Department of Physics & Astronomy, Gower Street, London, WC1E 6BT, United Kingdom Infineon Technologies, Siemensstraße 2, 9500 Villach, Austria Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria KAI GmbH, Europastraße 8, 9500 Villach, Austria Infineon Technologies, Schottkystraße 10, 91058 Erlangen, Germany
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